Diodes DMN2027USS - Manual (Page 4)

DMN2027USS
Document number: DS35038 Rev. 1 - 2
4 of 8
www.diodes.com
October 2010
© Diodes Incorporated
DMN2027USS
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
20 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current I DSS
- - 1.0 μA
V DS = 20V, V GS = 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
0.6 1.0 1.3 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance (Note 6) R
DS (ON)
-
11 20
m Ω
V
GS
= 4.5V, I
D
= 9.4A
15 28 V
GS
= 2.5V, I
D
= 8.3A
Forward Transfer Admittance (Note 6 & 7) |Y fs | - 16 - S V DS = 5V, I D = 9.4A
Diode Forward Voltage (Note 6) V
SD
- 0.7 1.3 V V
GS
= 0V, I
S
= 1.3A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
- 1000 -
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 166 -
Reverse Transfer Capacitance C
rss
- 158 -
Gate Resistance R g
- 1.51 - Ω V DS = 0V, V GS = 0V, f = 1MHz
Total Gate Charge (Note 8) Q
g
- 7.0 -
nC
V
GS
= 2.5V
V
DS
= 10V
I
D
= 9.4A
Total Gate Charge (Note 8) Q
g
- 11.6 -
V GS = 4.5V Gate-Source Charge (Note 8) Q gs
- 2.7 -
Gate-Drain Charge (Note 8) Q
gd
- 3.4 -
Turn-On Delay Time (Note 8) t
D(on)
- 11.67 -
ns
V
GS
= 4.5V, V
DS
= 10V,
R
G
= 6 Ω , I
D
= 1A
Turn-On Rise Time (Note 8) t r
- 12.49 -
Turn-Off Delay Time (Note 8) t
D(off)
- 35.89 -
Turn-Off Fall Time (Note 8) t
f
- 12.33 -
Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperatures.
0
5
10
15
20
25
30
0 0.5 1 1.5 2
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
V = 2.0V
GS
V = 1.8V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 3.5V
GS
V = 4.0V
GS
V = 10V
GS
0 0.5 1 1.5 2 2.5 3
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
0
5
10
15
20
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A