Diodes DMN2027USS - Manual (Page 2)

DMN2027USS
Document number: DS35038 Rev. 1 - 2
2 of 8
www.diodes.com
October 2010
© Diodes Incorporated
DMN2027USS
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source voltage V DSS
20
V
Gate-Source voltage V
GS
±12
Continuous Drain current V
GS
= 4.5V
(Note 3)
I
D
9.8
A
T
A
= 70°C (Note 3) 7.9
(Note 2) 7.3
Pulsed Drain current V GS = 4.5V (Note 4) I DM
45.0
Continuous Source current (Body diode) (Note 3) I
S
6.0
Pulsed Source current (Body diode) (Note 4) I
SM
45.0
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 2)
P D
1.56
12.5
W
mW/
°C
(Note 3)
2.81
22.5
Thermal Resistance, Junction to Ambient
(Note 2)
R θJA
80.0
°C/W (Note 3) 44.5
Thermal Resistance, Junction to Lead (Note 5) R θJL 37.0
Operating and storage temperature range T
J
, T
STG
-55 to 150 °C
Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t
≤ 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).