Diodes DMN2027USS - Manual (Page 5)

DMN2027USS
Document number: DS35038 Rev. 1 - 2
5 of 8
www.diodes.com
October 2010
© Diodes Incorporated
DMN2027USS
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
0
0.005
0.010
0.015
0.020
0.025
0.030
0 5 10 15 20
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R
, DRA
IN-
S
OUR
CE ON-
RE
S
IST
A
NCE (
)
DS
(O
N)
Ω
V = 4.5V
GS
V = 2.5V
GS
0
0.005
0.010
0.015
0.020
0.025
0.030
0 5 10 15 20
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
T
AN
C
E (
)
DS
(O
N)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0.6
0.8
1.0
1.2
1.4
1.6
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, D
RAIN-
S
O
U
RCE
ON-
RES
IST
A
NCE
(
NORM
A
L
IZ
E
D)
DS
O
N
V = 2.5V
I = 5A
GS
D
V = 4.5V
I = 10A
GS
D
0
0.005
0.010
0.015
0.020
0.025
0.030
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, DR
AIN-
S
O
U
RC
E
O
N
-R
ESI
ST
ANCE
(
N
O
R
M
A
L
IZE
D)
DS
O
N
V = 4.5V
I = 10A
GS
D
V = 2.5V
I = 5A
GS
D
0
0.5
1.0
1.5
2.0
2.5
3.0
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
T
E
THRES
H
O
L
D
VO
L
T
AG
E (
V
)
GS
(T
H
) I = 250µA
D
I = 1mA
D
0
4
8
12
16
20
0 0.2 0.4 0.6 0.8 1.0 1.2
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A