Diodes DMN1019UFDE - Manual (Page 5)

DMN1019UFDE
D atasheet number: DS35561 Rev. 5 - 2
5 of 7
www.diodes.com
October 2013
© Diodes Incorporated
DMN1019UFDE
ADVAN
CE I
N
F
O
RM
ATI
O
N
0
0.004
0.008
0.012
0.016
0.020
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 10 On-Resistance Variation with Temperature
J

R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
TA
N
C
E (
)
DS
(O
N)

V = 4.5V
I = 5A
GS
D
V = V
I = 10A
GS
D
10
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 11 Gate Threshold Variation vs. Ambient Temperature
J

V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
I = 1mA
D
I = 250µA
D
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig.12 Diode Forward Voltage vs. Current
0
5
10
15
20
25
30
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(V)
S
T = 25°C
A
100
1,000
10,000
0 2 4 6 8 10 12
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 13 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
pF)
T
C
iss
C
oss
C
rss
f = 1MHz
0
2
4
6
8
0 5 10 15 20 25 30 35 40 45 50
Q (nC)
g
, TOTAL GATE CHARGE
Fig. 14 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
V = -4V
I = A
DS
D
-10