beautypg.com

Electrical characteristics, Dmn1019ufde – Diodes DMN1019UFDE User Manual

Page 3

background image

DMN1019UFDE

D

atasheet number: DS35561 Rev. 5 - 2

3 of 7

www.diodes.com

October 2013

© Diodes Incorporated

DMN1019UFDE

ADVAN

CE I

N

F

O

RM

ATI

O

N







Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

12

— — V

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current T

J

= +25°C

I

DSS

1 µA

V

DS

= 12V, V

GS

= 0V

Gate-Source Leakage

I

GSS

±2 µA

V

GS

= ±8V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

0.35 — 0.8 V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)

7 10

mΩ

V

GS

= 4.5V, I

D

= 9.7A

8 12

V

GS

= 2.5V, I

D

= 9A

10 14

V

GS

= 1.8V, I

D

= 8.1A

14 18

V

GS

= 1.5V, I

D

= 4.5A

28 41

V

GS

= 1.2V, I

D

= 2.4A

Forward Transfer Admittance

|Y

fs

|

28 — S

V

DS

= 4V, I

D

= 9.7A

Diode Forward Voltage

V

SD

0.8 1.2 V V

GS

= 0V, I

S

= 10A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

— 2425 —

pF

V

DS

= 10V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

— 396 —

Reverse Transfer Capacitance

C

rss

— 375 —

Gate Resistance

R

g

— 1.1 — Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge (V

GS

= 8V)

Q

g

— 50.6 —

nC

V

DS

= 4V, I

D

= 10A

Total Gate Charge (V

GS

= 4.5V)

Q

g

— 27.3 —

Gate-Source Charge

Q

gs

— 3.4 —

Gate-Drain Charge

Q

gd

— 5.2 —

Turn-On Delay Time

t

D(on)

— 7.6 —

ns

V

DD

= 4V, V

GS

= 10V, I

D

= 10A

R

G

= 1Ω, R

L

= 0.4Ω

Turn-On Rise Time

t

r

— 22.2 —

Turn-Off Delay Time

t

D(off)

— 57.6 —

Turn-Off Fall Time

t

f

— 16.8 —

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.







0.00001

0.0001

0.001

0.01

0.1

1

10

100

1,000

t1, PULSE DURATION TIME (sec)

Fig. 3 Transient Thermal Resistance

0.001

0.01

0.1

1

r(t

),

T

R

AN

SI

EN

T

T

H

E

R

MA

L

R

ES

IS

TAN

C

E

R

= r * R

JA(t)

(t)

JA

JA

R

= 178 C/W

Duty Cycle, D = t1/t2

D = 0.5

D = 0.7

D = 0.9

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse