Diodes DMG8601UFG - Manual (Page 4)

DMG8601UFG
Document number: DS31788 Rev. 5 - 2
4 of 6
www.diodes.com
September 2012
© Diodes Incorporated
DMG8601UFG
NEW PROD
UC
T
0
0.4
0.8
1.2
1.6
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
TE
T
HRESHO
L
D VO
L
T
A
G
E
(
V
)
GS
(T
H
)
I = 1mA
D
I = 250µA
D
0.2 0.4 0.6 0.8 1.0 1.2
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
0
4
8
12
16
20
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
0 4 8 12 16 20
Fig. 9 Typical Leakage Current vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
100,000
I
, L
EAKA
G
E
C
U
R
R
E
N
T
(n
A
)
DS
S
10,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Fig. 10 Gate-Source Leakage Current vs. Voltage
1 2 3 4 5 6 7 8
V , GATE-SOURCE VOLTAGE (V)
GS
1
10
100
1,000
10,000
I,
L
E
A
K
A
G
E
C
U
R
R
EN
T
(n
A
)
GS
S
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Fig. 11 Gate-Source Leakage Current vs. Voltage
1
10
100
1,000
10,000
1 2 3 4 5 6 7 8
-V , GATE-SOURCE VOLTAGE (V)
GS
I
, L
E
AKA
G
E
C
U
R
R
E
N
T
(n
A
)
GS
S
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A