Diodes DMG8601UFG - Manual (Page 2)

DMG8601UFG
Document number: DS31788 Rev. 5 - 2
2 of 6
www.diodes.com
September 2012
© Diodes Incorporated
DMG8601UFG
NEW PROD
UC
T
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V DSS 20 V
Gate-Source Voltage V GSS ±12 V
Continuous Drain Current (Note 5)
Steady
State
T A = +25°C
T A = +70°C
I D
6.1
5.2
A
Pulsed Drain Current I DM 27 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P D 0.92 W
Thermal Resistance, Junction to Ambient @T A = +25°C R θJA 136 °C/W
Operating and Storage Temperature Range T J, T STG -55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV DSS
20 - - V V GS = 0V, I D = 250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 1.0 μA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±10
μA
V
GS
= ±10V, V
DS
= 0V
Gate-Source Breakdown Voltage BV
SGS
±12 - - V V
DS
= 0V, I
G
= ±250 μA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.35 - 1.05 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
-
-
- 17
20
25 23
27
34
mΩ
V GS = 4.5V, I D = 6.5A
V
GS
= 2.5V, I
D
= 5.5A
V
GS
= 1.8V, I
D
= 3.5A
Forward Transfer Admittance |Y
fs
| - 10 - S V
DS
= 10V, I
D
= 5A
Diode Forward Voltage V
SD
- 0.7 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
- 143 - pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 74 - pF
Reverse Transfer Capacitance C
rss
- 29 - pF
Gate Resistance R g
- 202 - Ω V DS = 0V, V GS = 0V, f = 1MHz
Total Gate Charge Q
g
- 8.8 - nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 6.5A
Gate-Source Charge Q
gs
- 1.4 - nC
Gate-Drain Charge Q gd
- 3.0 - nC
Turn-On Delay Time t
D(on)
- 53 - ns
V DD = 10V, V GS = 4.5V,
R
L
= 10 Ω, R
G
= 6 Ω
Turn-On Rise Time t
r
- 78 - ns
Turn-Off Delay Time t
D(off)
- 562 - ns
Turn-Off Fall Time t
f
- 234 - ns
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Short duration pulse test used to minimize self-heating effect.