Diodes DMG6898LSD - Manual (Page 4)

DMG6898LSD
Document number: DS31947 Rev. 4 - 2
4 of 6
www.diodes.com
March 2012
© Diodes Incorporated
DMG6898LSD
NEW PROD
UC
T
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
TE
T
HRESHO
L
D VO
L
T
AG
E
(
V
)
GS
(T
H
)
I = 250µA
D
I = 1mA
D
0
5
10
15
20
0.4 0.6 0.8 1 1.2
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
0
200
400
600
800
1,000
1,200
1,400
1,600
1,800
0 5 10 15 20
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
IT
A
N
C
E (
p
F
)
C
iss
C
rss
C
oss
0 2 4 6 8 10 12 14 16 18 20
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
I
, L
EAK
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
10,000
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
2
4
6
8
10
0 4 8 12 16 20 24 28
V = 10V
I = 9.4A
DS
D
Q , OTAL GATE CHARGE (nC)
Fig. 11 Gate-Source Voltage vs. Total Gate Charge
g
T
V
, A
T
E-
SO
U
R
C
E
VO
L
T
AG
E
(V)
GS
G