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Dmg6898lsd new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMG6898LSD User Manual

Page 2: Electrical characteristics, Dmg6898lsd

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DMG6898LSD

Document number: DS31947 Rev. 4 - 2

2 of 6

www.diodes.com

March 2012

© Diodes Incorporated

DMG6898LSD

NEW PROD

UC

T





Maximum Ratings

@T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

20 V

Gate-Source Voltage

V

GSS

±12 V

Continuous Drain Current (Note 4)

Steady

State

T

A

= 25°C

T

A

= 85°C

I

D

9.5
7.1

A

Pulsed Drain Current (Note 5)

I

DM

30 A




Thermal Characteristics

Characteristic Symbol

Value

Unit

Power Dissipation (Note 4)

P

D

1.28 W

Thermal Resistance, Junction to Ambient @T

A

= 25°C (Note 4)

R

θJA

99.3 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C




Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage

BV

DSS

20 - - V

V

GS

= 0V, I

D

= 250

μA

Zero Gate Voltage Drain Current T

J

= 25°C

I

DSS

- -

1.0

μA

V

DS

= 20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

- -

±10

μA

V

GS

= ±12V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

V

GS(th)

0.5 1.0 1.5 V V

DS

= V

GS

, I

D

= 250

μA

Static Drain-Source On-Resistance

R

DS (ON)

-

11
17

16
23

m

V

GS

= 4.5V, I

D

= 9.4A

V

GS

= 2.5V, I

D

= 8.3A

Forward Transfer Admittance

|Y

fs

|

- 17 - S

V

DS

= 5V, I

D

= 9.4A

Diode Forward Voltage

V

SD

- 0.7

1.2 V

V

GS

= 0V, I

S

= 1.3A

DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance

C

iss

-

1149

- pF

V

DS

= 10V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

-

157

- pF

Reverse Transfer Capacitance

C

rss

-

142

- pF

Gate Resistance

R

g

-

1.51

-

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge (V

GS

= 4.5V)

Q

g

-

11.6

- nC

V

GS

= 4.5V, V

DS

= 10V,

I

D

= 9.4A

Total Gate Charge (V

GS

= 10V)

Q

g

-

26

- nC

Gate-Source Charge

Q

gs

-

2.7

- nC

Gate-Drain Charge

Q

gd

-

3.4

- nC

Turn-On Delay Time

t

D(on)

-

11.67

- ns

V

DD

= 10V, V

GS

= 4.5V,

R

GEN

= 6

Ω, I

D

= 1A

Turn-On Rise Time

t

r

-

12.49

- ns

Turn-Off Delay Time

t

D(off)

-

35.89

- ns

Turn-Off Fall Time

t

f

-

12.33

- ns

Notes:

4. Device mounted on FR-4 PCB, with minimum recommended pad layout.

5. Repetitive rating, pulse width limited by junction temperature.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.