Diodes DMG6898LSD - Manual (Page 3)

DMG6898LSD
Document number: DS31947 Rev. 4 - 2
3 of 6
www.diodes.com
March 2012
© Diodes Incorporated
DMG6898LSD
NEW PROD
UC
T
0
5
10
15
20
0 0.5 1 1.5 2
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
V = 2.0V
GS
V = 1.8V
GS
V = 1.5V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 8.0V
GS
I
, DRA
IN CURRENT
(
A
)
D
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 10V
DS
0
0.01
0.02
0.03
0.04
0.05
0.06
0 2 4 6 8 10 12 14 16 18 20
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R
, DRAI
N
-S
OURCE
ON-
R
E
S
IS
T
A
NCE
(
)
DS
(O
N
)
Ω
V = 4.5V
GS
V = 2.5V
GS
V = 1.8V
GS
0
0.01
0.02
0.03
0.04
0 2 4 6 8 10 12 14 16 18 20
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R
,
D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
T
AN
C
E (
)
DS
(O
N)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, DRA
IN-
S
OURC
E
O
N
-R
ESI
ST
A
NCE (
N
O
R
M
A
L
IZE
D)
DS
O
N
V = 4.5V
I = 500mA
GS
D
V = 2.5V
I = 150mA
GS
D
0
0.01
0.02
0.03
0.04
R
, D
R
AI
N
-S
O
U
R
C
E
O
N-
R
ES
IS
T
AN
C
E (
)
DS
O
N
Ω
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V = 2.5V
I = 150mA
GS
D
V = 4.5V
I = 500mA
GS
D