Diodes DMG5802LFX - Manual (Page 4)

DMG5802LFX
Document number: DS35009 Rev. 5 - 2
4 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMG5802LFX
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, GA
TE TH
RESHOL
D VO
LT
AG
E
(
V
)
GS
(T
H
)
I = 250µA
D
I = 1mA
D
0 0.2 0.4 0.6 0.8 1.0 1.2
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
0
4
8
12
16
20
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
0 4 8 12 16 20 24
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
10
100
1,000
10,000
C
, C
A
P
A
C
IT
AN
C
E (
p
F
)
f = 1MHz
C
iss
C
rss
C
oss
0 4 8 12 16 20 24
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
I
, L
EAK
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
10,000
100,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0 5 10 15 20 25 30 35 40
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
0
2
4
6
8
10
V,
G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
V = 15V
I = 7A
DS
D
0.01
0.1
1
10
100
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 1ms
W
P = 100µs
W
T = 150°C
T = 25°C
J(max)
A
V = 4.5V
Single Pulse
GS
DUT on 1 * MRP Board
P = 10ms
W
R
Limited
DS(on)