Diodes DMG5802LFX User Manual
Dmg5802lfx, Product summary, Description
DMG5802LFX
Document number: DS35009 Rev. 5 - 2
1 of 6
November 2013
© Diodes Incorporated
DMG5802LFX
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
24V
15mΩ @ V
GS
= 4.5V
6.5A
20mΩ @ V
GS
= 2.5V
5.6A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC
Converters
Power management functions
Features
Low
On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected up to 3kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case:
W-DFN5020-6
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.03 grams (approximate)
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMG5802LFX-7
W-DFN5020-6
3000 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2010
2011
2012
2013
2014
2015
2016
2017
2018
Code X Y Z A B C D E F
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Equivalent Circuit
Top View
W-DFN5020-6
ESD PROTECTED TO 3kV
ME = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Bottom View
S1
S1
G1
S2
S2
G2
D1/D2
Top View
Pin-Out
ME
YM
D1
S1
G1
D2
S2
G2