Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMG5802LFX User Manual
Page 2: Dmg5802lfx
DMG5802LFX
Document number: DS35009 Rev. 5 - 2
2 of 6
November 2013
© Diodes Incorporated
DMG5802LFX
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
24 V
Gate-Source Voltage
V
GSS
±12 V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
6.5
5.2
A
Continuous Drain Current (Note 5) V
GS
= 2.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
5.6
4.5
A
Pulsed Drain Current (Note 6)
I
DM
70 A
Thermal Characteristics
Characteristic Symbol
Max
Unit
Power Dissipation (Note 5)
P
D
0.98 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
R
θJA
126.5 °C/W
Operating and Storage Temperature Range
T
J
,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
24 — — V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
— — 1.0 μA
V
DS
= 24V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — ±10 μA
V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.6 0.9 1.5 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
— 11 15
mΩ
V
GS
= 4.5V, I
D
= 6.5A
— 12 17
V
GS
= 4V, I
D
= 5.6A
— 13 18
V
GS
= 3.1V, I
D
= 5.6A
— 14 20
V
GS
= 2.5V, I
D
= 5.6A
Forward Transfer Admittance
|Y
fs
|
— 17 — S
V
DS
= 5V, I
D
= 6.5A
Diode Forward Voltage
V
SD
— 0.6 0.9 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 1066.4
—
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 132.0 —
Reverse Transfer Capacitance
C
rss
— 127.1 —
Gate Resistance
R
g
— 1.47 — Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge V
GS
= 4.5V
Q
g
— 14.5 —
nC
V
GS
= 4.5V, V
DS
= 15V, I
D
= 5.8A
Total Gate Charge V
GS
= 10V
Q
g
— 31.3 —
V
GS
= 10V, V
DS
= 15V,
I
D
= 5.8A
Gate-Source Charge
Q
gs
— 2.0 —
Gate-Drain Charge
Q
gd
— 3.1 —
Turn-On Delay Time
t
D(on)
— 3.69 — ns
V
GS
= 10V, V
DS
= 15V,
R
L
= 2.1Ω, R
G
= 3Ω
Turn-On Rise Time
t
r
— 13.43 — ns
Turn-Off Delay Time
t
D(off)
— 32.18 — ns
Turn-Off Fall Time
t
f
— 22.45 — ns
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.