Npn (mmbta06) transistor (q2) plots – Diodes HBDM60V600W User Manual
Page 4

HBDM60V600W
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
1
10
-V
, BA
SE E
M
I
100
T
T
E
R
V
O
L
T
A
G
E (
V
)
BE
(O
N
)
-I , COLLECTOR CURRENT (mA)
Fig. 6 Typical Base Emitter Voltage vs. Collector Current
C
V
= 5V
CE
T = 150°C
A
T = 25°C
A
T = -50°C
A
1
10
1,000
100
1
10
100
f,
G
AI
N BAN
DW
ID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
-I , COLLECTOR CURRENT (mA)
Fig. 7 Typical Gain Bandwidth Product vs. Collector Current
C
NPN (MMBTA06) Transistor (Q2) Plots
0.001
0.01
I BASE CURRENT (mA)
Fig. 9 Typical Collector Saturation Region
B,
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1
10
100
V,
C
O
LL
E
C
T
O
R
EM
IT
T
E
R
V
O
L
T
A
G
E (
V
)
CE
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I
, CO
L
L
ECTO
R-
BA
SE CU
RRENT (
n
A)
CB
O
ture
T , AMBIENT TEMPERATURE (ºC)
Fig. 8 Typical Collector-Cutoff Current vs. Ambient Tempera
A
10
0.01
0.1
1
25
50
75
100
125
1
10
1,000
10,000
100
1
10
1,000
100
h,
D
C
C
U
R
R
EN
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 11 Typical DC Current Gain vs. Collector Curren
C
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
4 of 7
July 2008
© Diodes Incorporated
1
10
100
1,000
V,
C
O
LL
E
C
T
O
R
T
O
EM
IT
T
E
R
SA
TURA
TI
O
N
VO
L
T
AG
E
(V
)
CE
(S
A
T
)
I , COLLECTOR CURRENT (mA)
Fig. 10 Typical Collector Emitter Saturation Voltage vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0.050
0
0.100
0.150
0.200
0.250
0.300
0.350
0.400
0.450
0.500
I
I
C
B
= 10
t