Pnp (mmbt2907a) transistor (q1) plots, Typical characteristics – Diodes HBDM60V600W User Manual
Page 3
HBDM60V600W
Typical Characteristics
@T
A
= 25°C unless otherwise specified
0
50
100
25
50
75
100
125
150
175
200
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N
(mW
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
A
150
200
0
PNP (MMBT2907A) Transistor (Q1) Plots:
1.0
5.0
20
10
30
0.1
10
1.0
30
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
REVERSE VOLTAGE (V)
Fig. 2 Typical Capacitance
Cobo
Cibo
-I , BASE CURRENT (mA)
Fig. 3 Typical Collector Saturation Region
B
-V
,
C
O
LL
E
C
T
O
R
-E
M
IT
T
E
R
V
O
L
T
A
G
E (
V
)
CE
0.001
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1
10
100
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
3 of 7
July 2008
© Diodes Incorporated
0
0.1
0.2
0.3
0.6
0.5
0.4
1
10
100
1,000
-I , COLLECTOR CURRENT (mA)
Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current
C
-V
,
C
O
LL
E
C
T
O
R
T
O
EM
IT
T
E
R
SA
TURA
TI
O
N
VO
L
T
AG
E
(V)
CE
(S
A
T
)
I
I
C
B
= 10
T = 150°C
A
T = 25°C
A
T = -50°C
A
1
10
1,000
100
1
10
1,000
100
h,
D
C
C
U
R
R
EN
T
G
AI
N
FE
-I , COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
C
V
= 5V
CE
T = 150°C
A
T = 25°C
A
T = -50°C
A