Diodes HBDM60V600W User Manual
Features, Mechanical data, Maximum ratings: total device
HBDM60V600W
COMPLEX TRANSISTOR ARRAY FOR BIPOLAR
TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER
Features
•
Epitaxial Planar Die Construction
•
Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
Sub-Component P/N
Reference
Device Type
MMBT2907A_DIE
Q1
PNP Transistor
MMBTA06_DIE
Q2
NPN Transistor
Mechanical Data
•
Case: SOT-363
•
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminal Connections: See Schematic & Pin Configuration
•
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 6
•
Ordering Information: See Page 6
•
Weight: 0.016 grams (approximate)
EQ1
BQ2
EQ2
CQ1
CQ2
Q2
MMBTA06
Q1
MMBT2907A
BQ1
Top View
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
1 of 7
July 2008
© Diodes Incorporated
Maximum Ratings: Total Device
@T
A
= 25°C unless otherwise specified
Device Schematic
Characteristic
Symbol
Value
Unit
Operating and Storage Junction Temperature Range
V
EBO
-55 to +150
°C
Thermal Characteristics: Total Device
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 3)
P
D
200
mW
Thermal Resistance, Junction to Ambient Air (Note 3)
R
θJA
625
°C/W
Maximum Ratings: Sub-Component Devices
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Q1-PNP Transistor
(MMBT2907A)
Q2-NPN Transistor
(MMBTA06)
Unit
Collector-Base Voltage
V
CBO
-60
80
V
Collector-Emitter Voltage
V
CEO
-60
65
V
Emitter-Base Voltage
V
EBO
-5.5
6
V
Collector Current - Continuous (Note 3)
I
C
-600
500
mA
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our w 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 7 or on Diodes Inc. suggested pad layout document
AP02001, which can be found on our w