Diodes DSS60601MZ4 - Manual (Page 4)

DSS60601MZ4
Document number: DS31587 Rev. 3 - 2
4 of 8
www.diodes.com
March 2014
© Diodes Incorporated
DSS60601MZ4
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
100   V I
C
= 100 A
Collector-Emitter Breakdown Voltage (Note 10) BV
CEO
60   V I
C
= 10mA
Emitter-Base Breakdown Voltage BV
EBO
6   V I
E
= 100 A
Collector-Base Cutoff Current I
CBO
  100 nA V
CB
= 40V, I
E
= 0
  50 A V
CB
= 40V, I
E
= 0, T
J
= 150°C
Emitter-Base Cutoff Current I
EBO
  100 nA V
EB
= 6V, I
C
= 0
ON CHARACTERISTICS (Note 10)
DC Current Gain h
FE
150  

V
CE
= 2V, I
C
= 0.5A
120  360 V
CE
= 2V, I
C
= 1A
100   V
CE
= 2V, I
C
= 2A
50   V
CE
= 2V, I
C
= 6A
Collector-Emitter Saturation Voltage V
CE(SAT)
  40
mV
I
C
= 0.1A, I
B
= 2.0mA
  60 I
C
= 1A, I
B
= 100mA
 80 100 I
C
= 2A, I
B
= 200mA
  220 I
C
= 3A, I
B
= 60mA
  300 I
C
= 6A, I
B
= 600mA
Equivalent On-Resistance R
CE(SAT)
 40 50 m  I
E
= 2A, I
B
= 200mA
Base-Emitter Saturation Voltage V
BE(SAT)
  0.9 V I
C
= 1A, I
B
= 100mA
Base-Emitter Turn-on Voltage V
BE(ON)
  0.9 V V
CE
= 2V, I
C
= 1A
SMALL SIGNAL CHARACTERISTICS
Transition Frequency f
T
100   MHz V CE
= 10V, I
C
= 100mA,
f = 100MHz
Output Capacitance C
obo
 26  pF V
CB
= 10V, f = 1MHz
Input Capacitance C
ibo
 325  pF V
EB
= 5V, f = 1MHz
Turn-On Time t
on
—  87 —  ns
V
CC
= -30v,
I
CC
= 150mA
I
B1
= - I
B2
=15mA
Delay Time t
d
—  41 —  ns
Rise Time t
r
—  46 —  ns
Turn-Off Time t
off
—  294 —  ns
Storage Time t
s
—  250 —  ns
Fall Time t
f
—  44 —  ns
Notes: 10. Measured under pulsed conditions. Pulse width  300μs. Duty cycle 2%.