Typical characteristics – q2 pnp transistor, Dst847bpdp6 – Diodes DST847BPDP6 User Manual
Page 6
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
6 of 8
January 2010
© Diodes Incorporated
DST847BPDP6
Typical Characteristics – Q2 PNP Transistor
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0
1
2
3
4
5
-V
, COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 10 Typical Collector Current
vs. Collector-Emitter Voltage
-I
,
C
O
LL
E
C
T
O
R
C
U
R
R
E
N
T
(A
)
C
I = -2mA
B
I = -0.2mA
B
I = -0.4mA
B
I = -0.6mA
B
I = -0.8mA
B
I = -1mA
B
I = -1.6mA
B
I = -1.4mA
B
I = -1.2mA
B
I = -1.8mA
B
10
100
1,000
0.1
1
10
100
1,000
-I , COLLECTOR CURRENT (A)
C
Fig. 11 Typical DC Current Gain vs. Collector Current
h,
D
C
C
U
R
R
E
N
T
G
AI
N
FE
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= 5V
CE
0.1
1
10
100
1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 12 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.01
0.1
1
-V
,
C
O
LL
E
C
T
O
R
-E
MI
T
T
E
R
SA
TU
R
A
T
IO
N
CE
(S
A
T
)
V
O
L
T
AG
E (
V
)
T = -55°C
A
I /I = 10
C B
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.1
1
10
100
1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 13 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.01
0.1
1
-V
,
C
O
LL
E
C
T
O
R
-E
M
IT
T
E
R
SA
TUR
A
T
IO
N
CE
(S
A
T
)
VO
L
T
AG
E
(
V
)
T = -55°C
A
I /I = 20
C B
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.1
1
10
100
1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 14 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
0.2
0.4
0.6
0.8
1.2
-V
, B
ASE-
EM
IT
T
E
R
T
U
R
N-
O
N V
O
L
T
A
G
E (
V
)
BE(
O
N
)
1.0
V
= -5V
CE
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.1
1
10
100
1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 15 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0.2
0.4
0.6
0.8
1.0
1.2
-V
, BAS
E-
EM
IT
T
E
R
SA
T
U
R
A
T
IO
N V
O
L
T
A
G
E (
V)
BE
(S
A
T
)
I
= 10
C B
/I
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A