Typical characteristics – q1 npn transistor, Dst847bpdp6 – Diodes DST847BPDP6 User Manual
Page 4

DST847BPDP6
Document number: DS32036 Rev. 1 - 2
4 of 8
January 2010
© Diodes Incorporated
DST847BPDP6
Typical Characteristics – Q1 NPN Transistor
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0
1
2
3
4
5
V
, COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
I,
C
O
LL
E
C
T
O
R
C
U
R
R
E
N
T
(A
)
C
I = 2mA
B
I = 0.2mA
B
I = 0.4mA
B
I = 0.6mA
B
I = 0.8mA
B
I = 1.6mA
B
I = 1.4mA
B
I = 1.2mA
B
I = 1.8mA
B
I = 1mA
B
0
50
100
150
200
250
300
350
400
450
1
10
100
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical DC Current Gain vs. Collector Current
h,
D
C
C
U
R
R
EN
T
G
AI
N
FE
T = -55°C
A
T = 25°C
A
T = 100°C
A
T = 150°C
A
V
= 5V
CE
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
1
10
100
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V,
C
O
LL
E
C
T
O
R
-E
MI
T
T
E
R
SA
T
URA
T
ION
CE
(S
A
T
)
VO
L
T
AG
E
(
V)
T = -55°C
A
I /I = 10
C B
T = 25°C
A
T = 100°C
A
T = 150°C
A
1
10
100
I , COLLECTOR CURRENT (mA)
C
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.01
0.1
V,
C
O
LL
E
C
T
O
R
-E
M
IT
T
E
R
SA
T
URA
T
ION
CE
(S
A
T
)
VO
L
T
AG
E
(
V)
1
I /I = 20
C B
T = 100°C
A
T = 50°C
A
T = 20°C
A
T = 10°C
A
0.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.2
0.4
0.6
0.8
V
, BASE
-EM
IT
T
E
R
T
U
R
N
-O
N
V
O
L
T
A
G
E (
V)
BE
(O
N
)
1.0
V
= 5V
CE
T = 150°C
A
T = 100°C
A
T = 25°C
A
T = -55°C
A
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
V
, B
ASE-
E
M
IT
T
E
R
SA
T
U
R
A
T
IO
N
V
O
L
T
A
G
E (
V
)
BE
(S
A
T
)
T = 150°C
A
T = 100°C
A
T = 25°C
A
T = -55°C
A