Electrical characteristics – q2 pnp transistor, Dst847bpdp6 – Diodes DST847BPDP6 User Manual
Page 5
DST847BPDP6
Document number: DS32036 Rev. 1 - 2
5 of 8
January 2010
© Diodes Incorporated
DST847BPDP6
Electrical Characteristics – Q2 PNP Transistor
@T
A
= 25°C unless otherwise specified
Characteristic (Note 4)
Symbol
Min
Typical
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V
(BR)CBO
-50
-100
- V
I
C
= -10
μA, I
B
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CES
-50
-90
- V
I
C
= -10
μA, I
B
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-45
-65
- V
I
C
= -1mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-6
-8.5
- V
I
E
= -1
μA, I
C
= 0
Collector Cutoff Current
I
CBO
-
-
-15
nA
V
CB
= -30V
DC Current Gain
h
FE
100
200
340
330
-
470
-
I
C
= -10
μA, V
CE
= -5V
I
C
= -2.0mA, V
CE
= -5V
Collector-Emitter Saturation Voltage
V
CE(sat)
-
-
-70
-300
-175
-500
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(sat)
-
-
-760
-885
-1000
-1100
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Voltage
V
BE(on)
-600
-
-670
-715
-780
-850
mV
I
C
= -2.0mA, V
CE
= -5V
I
C
= -10mA, V
CE
= -5V
Current Gain-Bandwidth Product
f
T
100
340
- MHz
V
CE
= -5V, I
C
= -10mA,
f = 100MHz
Output Capacitance
C
obo
-
2.0
- pF
V
CB
= -10V, f = 1.0MHz
Notes:
4. Short duration pulse test used to minimize self-heating effect.