Diodes 74LVC1G34 - Manual (Page 5)

74LVC1G34
Document number: DS36108 Rev. 3 - 2
5 of 15
www.diodes.com
March 2014
© Diodes Incorporated
NEW PROD
UC
T
74LVC1G34
Electrical Characteristics
(@V
CC
= 3.3V, T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Test Conditions V
CC
-40°C to +85°C -40°C to +125°C
Unit
Min Typ Max Min Max
V
OH
High Level Output
Voltage
I
OH
= -100μA 1.65V to 5.5V V
CC
– 0.1 — — V
CC
– 0.1 —
V
I
OH
= -4mA 1.65V 1.2 — — 0.95 —
I
OH
= -8mA 2.3V 1.9 — — 1.7 —
I
OH
= -12mA 2.7V 2.2 — — 1.9 —
I
OH
= -16mA
3V
2.4 — — 2.2 —
I
OH
= -24mA 2.3 — — 2.0 —
I
OH
= -32mA 4.5V 3.8 — — 3.4 —
V
OL
Low Level Output
Voltage
I
OL
= 100μA 1.65V to 5.5V — — 0.1 — 0.1
V
I
OL
= 4mA 1.65V — — 0.45 — 0.7
I
OL
= 8mA 2.3V — — 0.3 — 0.45
I
OL
= 12mA 2.7V — — 0.4 — 0.6
I
OL
= 16mA
3V
— — 0.4 — 0.6
I
OL
= 24mA — — 0.55 — 0.8
I
OL
= 32mA 4.5V — — 0.55 — .8
I
I
Input Current V
I
= 5.5V or GND 0V to 5.5V — ± 0.1 ±5 — ± 100 μA
I
OFF
Power Down
Leakage Current
V
I
or V
O
= 5.5V 0V — — ±10 — ±200 μA
I
CC
Supply Current
V
I
= 5.5V or GND,
I
O
= 0
5.5V — 0.1 10 — 200 μA
∆I
CC
Additional Supply
Current
Input at V
CC
–0.6V 3V to 5.5V — — 500 — 5000 μA
C
I
Input Capacitance V
I
= V
CC
– or GND 3.3V — 5 — — — pF
Package Characteristics
(@V
CC
= 3.3V, T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Test Conditions V
CC
Min Typ. Max Unit
θ
JA
Thermal Resistance
Junction-to-Ambient
SOT25
(Note 9)
— 204 —
o C/W
SOT353 — 371 —
SOT553 — 231 —
X2-DFN0808-4 — 400 —
X1-DFN1010-6 — 435 —
X2-DFN1010-6 — 445 —
X2-DFN1409-6 — 470 —
X2-DFN1410-6 — 460 —
θ
JC
Thermal Resistance
Junction-to-Case
SOT25
(Note 9)
— 52 —
o C/W
SOT353 — 143 —
SOT553 — 105 —
X2-DFN0808-4 — 225 —
X1-DFN1010-6 — 250 —
X2-DFN1010-6 — 250 —
X2-DFN1409-6 — 275 —
X2-DFN1410-6 — 265 —
Note: 9. Test condition for each of the 8 package types: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.