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Advance datasheet, Electrical characteristics (continued), Parameter symbol condition min typ max unit – Diodes AP2820 User Manual

Page 8

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Advance Datasheet

High-side Power Distribution Switch with Enable and Flag AP2820

Jul. 2012 Rev 1. 7 BCD Semiconductor Manufacturing Limited

8

Electrical Characteristics (Continued)

For E/F/G/H Versions

(V

IN

=5.0V, C

IN

=2.2

μF, C

OUT

=1.0

μF, Typical T

A

=25°C, Bold typeface applies over -40°C≤T

A

≤85°C ranges, unless otherwise

specified)

Parameter Symbol

Condition

Min

Typ

Max

Unit

Input Voltage Range

V

IN

2.7 5.5

V

Switch On Resistance

R

DS(ON)

V

IN

=5V, I

OUT

=2.5A

60

80

m

Ω

Current Limit

I

LIMIT

V

OUT

=4.0V 2.8

3.4

4.2

A

Supply Current

I

SUPPLY

V

IN

=5V, No Load

80

110

μA

Fold-back Short Current

I

SHORT

V

OUT

=0

1.18

A

Shutdown Supply Current

I

SHUTDOWN

Chip Disable, Shutdown Mode

0.1

1

μA

Enable High Input Threshold

V

ENH

1.6 5.5 V

Enable Low Input Threshold

V

ENL

0 1.0 V

Enable Pin Input Current

I

EN

Force 0V to 5V at EN Pin

-1.0

1.0

μA

Under Voltage Lockout
Threshold Voltage

V

UVLO

V

IN

Increasing from 0V

2.2

2.5

2.7

V

Under Voltage Hysteresis

V

UVLOHY

0.2 V

Reverse Current

I

REVERSE

Chip

Disable,

V

OUT

>V

IN

0.1

1.0

μA

Output Pull Low Resistance
after Shutdown

R

DISCHARGE

AP2820E,

AP2820G

Only

100 200

Ω

Output Turn-on Time

t

ON

From Enable Active to 90% of
Output

500

μs

FLAG Pin Delay Time

t

DFLG

From Over Current Fault
Condition to Flag Active

5 10

15

ms

FLAG Pin Low Voltage

V

FLG

I

SINK

=5mA

35

70

mV

FLAG Pin Leakage Current

I

LEAKAGE

FLAG Disable, Force 5.0V

1.0

μA

Thermal Shutdown
Temperature

T

OTSD

150

o

C

Thermal Shutdown Hysteresis

T

HYOTSD

30

o

C