New prod uc t ap9060, Typical performance characteristics – Diodes AP9060 User Manual
Page 4
AP9060
Document number: DS36001 Rev. 2 - 2
4 of 9
August 2012
© Diodes Incorporated
NEW PROD
UC
T
AP9060
Typical Performance Characteristics
Figure 3 V
OUT
vs. V
IN
Figure 4 Output Clamp Voltage vs. Temperature
Figure 5 On-Resistance vs. V
IN
and Temperature
Figure 6 On-Resistance vs. I
OUT
and Temperature
Figure 7 On-Resistance (normalized) vs. Temperature
Figure 8 FET Leakage Current (in thermal shutdown) vs. V
IN
0
1
2
3
4
5
6
7
8
9
10
11
12
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
V
OUT
(V
)
V
IN
(V)
T
A
= 25
°C
R
OUT
= 10k
Ω
10.0
10.2
10.4
10.6
10.8
11.0
11.2
11.4
11.6
11.8
12.0
-40
-20
0
20
40
60
80
100
120
V
CL
A
M
P
(V
)
TEMPERATURE (
°C)
V
IN
= 30V
I
OUT
= 0A
60
70
80
90
100
110
120
130
140
10
9
8
7
6
5
4
3
ON
R
ESISTAN
C
E
(m
Ω
)
V
IN
(V)
I
OUT
= 1A (pulsed)
85°C
50°C
25°C
0°C
−25°C
−40°C
60
70
80
90
100
110
120
130
25
175
325
475
625
775
925
O
N
R
E
SI
ST
A
N
C
E
(
m
Ω
)
I
OUT
(mA)
V
IN
= 5V
85°C
50°C
25°C
0°C
−25°C
−40°C
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
-40
-20
0
20
40
60
80
100
120
O
N
R
E
S
IST
AN
C
E
(
N
O
R
M
A
L
IZED
)
TEMPERATURE (
°C)
V
IN
= 5V
I
OUT
= 1A
0
2
4
6
8
10
12
14
16
3
6
9
12
15
18
21
24
27
30
L
E
AKA
GE
C
U
R
R
EN
T
(µA)
V
IN
(V)
R
OUT
= 10k
Ω
Temperature = 150
°C
Device in thermal shutdown mode