Ap6503, Electrical characteristics – Diodes AP6503 User Manual
Page 4
AP6503
Document number: DS35077 Rev. 5 - 2
4 of 15
January 2013
© Diodes Incorporated
AP6503
Electrical Characteristics
(V
IN
= 12V, T
A
= +25°C, unless otherwise specified.)
Symbol Parameter
Test
Conditions
Min
Typ
Max
Unit
I
IN
Shutdown Supply Current
V
EN
= 0V
0.3
3.0
µA
I
IN
Supply Current (Quiescent)
V
EN
= 2.0V, V
FB
= 1.0V
0.6
1.5
mA
R
DS(ON)1
High-Side Switch On-Resistance (Note 8)
100
mΩ
R
DS(ON)2
Low-Side Switch On-Resistance (Note 8)
100
mΩ
I
Limit
HS Current Limit
Minimum duty cycle
5.5
A
I
Limit
LS Current Limit
From Drain to Source
0.9
A
High-Side Switch Leakage Current
V
EN
= 0V, V
SW
= 0V,
V
SW
=12V
0
10
μA
AVEA
Error Amplifier Voltage Gain
(Note 8)
800
V/V
GEA
Error Amplifier Transconductance
ΔI
C
= ±10µA
1000 µA/V
GCS
COMP to Current Sense
Transconductance
2.8 A/V
F
SW
Oscillator Frequency
V
FB
= 0.75V
300 340 380 kHz
F
FB
Fold-back Frequency
V
FB
= 0V
0.30
f
SW
D
MAX
Maximum Duty Cycle
V
FB
= 800mV
90
%
T
ON
Minimum On Time
130
ns
V
FB
Feedback Voltage
T
A
= -40°C to +85°C
900 925 950 mV
Feedback Overvoltage Threshold
1.1
V
V
EN_Rising
EN Rising Threshold
0.7
0.8
0.9
V
EN Lockout Threshold Voltage
2.2
2.5
2.7
V
EN Lockout Hysteresis
220
mV
INUV
Vth
V
IN
Under Voltage Threshold Rising
3.80
4.05
4.40
V
INUV
HYS
V
IN
Under Voltage Threshold Hysteresis
250
mV
Soft-Start
Current
V
SS
= 0V
6
μA
Soft-Start
Period
C
SS
= 0.1µF
15
ms
T
SD
Thermal Shutdown (Note 8)
160
°C
Note: 8. Guaranteed by design