Ap3440, Recommended operating conditions, Electrical characteristics – Diodes AP3440 User Manual
Page 4

AP3440
Document number: DS36691 Rev. 2 - 2
4 of 15
March 2014
© Diodes Incorporated
AP3440
A Product Line of
Diodes Incorporated
N
E
W
P
R
O
D
U
C
T
Absolute Maximum Ratings
(Note 4)
Symbol
Parameter
Rating
Unit
V
IN
VIN Pin Voltage
-0.3 to 6.5
V
V
EN
EN Pin Voltage
-0.3 to 6.5
V
V
SW
SW Pin Voltage
-0.3 to V
IN
+0.3
V
V
FB
FB Pin Voltage
-0.3 to 6.5
V
V
COMP
COMP Pin Voltage
-0.3 to 6.5
V
V
PGD
PGD Pin Voltage
-0.3 to 6.5
V
V
RT/CLK
RT/CLK Pin Voltage
-0.3 to 6.5
V
V
SS
SS Pin Voltage
-0.3 to 6.5
V
JA
Thermal Resistance
70
ºC/W
T
J
Operating Junction Temperature
-40 to +125
ºC
T
STG
Storage Temperature
-65 to +150
ºC
T
LEAD
Lead Temperature (Soldering, 10sec)
+260
ºC
—
ESD(Machine Model)
200
V
—
ESD(Human Body Model)
2000
V
Note 4:
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied.
Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Symbol
Parameter
Min
Max
Unit
V
IN
Input Voltage
2.95
5.5
V
I
OUT(MAX)
Maximum Output Current
4
—
A
T
A
Operating Ambient Temperature
-40
+85
ºC
Electrical Characteristics
=2.95 to 5.5V, T
A
=+25ºC, unless otherwise specified. Specifications with boldface type apply
over full operating temperature range from -40 to +85ºC.)
Symbol
Parameters
Conditions
Min
Typ
Max
Unit
SUPPLY VOLTAGE (VIN PIN)
V
IN
Input Voltage
—
2.95
—
5.5
V
I
Q
Quiescent Current
V
FB
=0.9V, V
IN
=5V,
T
A
=+25ºC, R
T
=400k
—
360
575
μA
I
SHDN
Shutdown Supply Current
V
EN
=0V,T
A
=+25
C,
2.95V≤V
IN
≤5.5V
—
2
5
μA
ENABLE AND UVLO (EN PIN)
V
EN_H
Enable Threshold
Rising
1.16
1.25
1.37
V
V
EN_L
Falling
—
1.18
—
V
V
UVLO
Internal
Under
Voltage
Lockout Threshold
—
—
2.6
2.8
V
V
HYS
Internal
Under
Voltage
Hysteresis
—
—
150
—
mV