Bsp75n, Absolute maximum ratings, Thermal resistance – Diodes BSP75N User Manual
Page 3
BSP75N
© Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper. Allocation of 6cm
2
copper 33% to source tab and 66% to drain pin with tab and drain pin electrically isolated.
(b) For a device surface mounted on FR4 board as (a) and measured at t<=10s.
(c) For a device surface mounted on FR4 board with the minimum copper required for connections.
Parameter
Symbol
Limit
Unit
Continuous drain-source voltage
V
DS
60
V
Drain-source voltage for short circuit protection V
IN
= 5V
V
DS(SC)
36
V
Drain-source voltage for short circuit protection V
IN
= 10V
V
DS(SC)
20
V
Continuous input voltage
V
IN
-0.2 ... +10
V
Peak input voltage
V
IN
-0.2 ... +20
V
Operating temperature range
T
j
,
-40 to +150
°C
Storage temperature range
T
stg
-55 to +150
°C
Power dissipation at T
A
=25°C
(a)
P
D
1.5
W
Power dissipation at T
A
=25°C
(c)
P
D
0.6
W
Continuous drain current @ V
IN
=10V; T
A
=25°C
(a)
I
D
1.3
A
Continuous drain current @ V
IN
=5V; T
A
=25°C
(a)
I
D
1.1
A
Continuous drain current @ V
IN
=5V; T
A
=25°C
(c)
I
D
0.7
A
Continuous source current (body diode)
(a)
I
S
2.0
A
Pulsed source current (body diode)
(b)
I
S
3.3
A
Unclamped single pulse inductive energy
E
AS
550
mJ
Load dump protection
V
LoadDump
80
V
Electrostatic discharge (human body model)
V
ESD
4000
V
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
40/150/56
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to ambient
(a)
R
⍜JA
83
°C/W
Junction to ambient
(b)
R
⍜JA
45
°C/W
Junction to ambient
(c)
R
⍜JA
208
°C/W