Diodes BSS8402DW - Manual (Page 5)

BSS8402DW
Document number: DS30380 Rev. 21 - 2
5 of 7
www.diodes.com
February 2014
© Diodes Incorporated
BSS8402DW
P-CHANNEL – BSS84 Section
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 7 Typical Drain-Source Leakage Current vs. Voltage
I,
D
R
AI
N
LE
A
K
A
G
E
C
U
R
R
E
N
T
(n
A
)
DS
S
1000
5 10 15 20 25 30 35 40 45 50 55 60
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
100
10
1
V
,
GA
T
E
T
HRES
H
OL
D V
O
LT
AGE
(
V
)
GS
(T
H
)
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperaure
J
0
-600
-500
-400
-300
-200
-100
0 -2 -1 -5 -4 -3
I,
D
R
AI
N
-S
O
U
R
C
E
C
U
R
R
EN
T
(mA
)
D
V , DRAIN-SOURCE (V)
DS
Figure 9 Drain-Source Current vs. Drain-Source Voltage
T = 25 C
A
°
-0.0
-1.0
-0.8
-0.6
-0.4
-0.2
0 -2 -3 -4 -1 -8 -7 -6 -5
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
V , GATE-TO-SOURCE VOLTAGE (V)
GS
Figure 10 Drain Current vs. Gate-Source Voltage
0
1
2
4
5
3
6
8
7
10
9
0 -1 -2 -3 -4 -5
V , GATE TO SOURCE (V)
Figure 11 On-Resistance vs. Gate-Source Voltage
GS
T = 25 C
A
°
T = 125 C
A
°
R
, S
TA
T
IC DRA
IN-S
OUR
C
E
O
N
-R
ESI
S
TANCE (
)
DS
(O
N)
Ω
0
3
6
9
12
15
-50 -25 0 25 50 125 100 75 150
T , JUNCTION TEMPERATURE (°C)
Figure 12 On-Resistance vs. Junction Temperature
J
V = -10V
I = -0.13A
GS
D
R
, ON-RE
S
IS
TA
NCE
(
)
DS
Ω