Diodes BSS8402DW - Manual (Page 2)

BSS8402DW
Document number: DS30380 Rev. 21 - 2
2 of 7
www.diodes.com
February 2014
© Diodes Incorporated
BSS8402DW
Maximum Ratings – Total Device
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Power Dissipation (Note 5) P
D
200 mW
Thermal Resistance, Junction to Ambient R
θJA
625 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Maximum Ratings N-CHANNEL – Q
1
, 2N7002 Section
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
60 V
Drain-Gate Voltage R
GS
≤ 1.0MΩ V
DGR
60 V
Gate-Source Voltage Continuous
Pulsed
V
GSS
±20
±40
V
Drain Current (Note 5) Continuous
Continuous @ +100°C
Pulsed
I
D
115
73
800
mA
Maximum Ratings P-CHANNEL – Q
2
, BSS84 Section
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-50 V
Drain-Gate Voltage R
GS
≤ 20KΩ V
DGR
-50 V
Gate-Source Voltage Continuous V
GSS
±20 V
Drain Current (Note 5) Continuous I
D
-130 mA
Note: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com.