Bss8402dw, N-channel – Diodes BSS8402DW User Manual
Page 4
BSS8402DW
Document number: DS30380 Rev. 21 - 2
4 of 7
February 2014
© Diodes Incorporated
BSS8402DW
N-CHANNEL –
2N7002 Section
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 On-Region Characteristics
DS
I
,
DRAIN-
S
OURCE C
URRENT
(
A
)
D
0
1
2
3
4
5
0
0.2
I , DRAIN CURRENT (A)
Figure 2 On-Resistance vs. Drain Current
D
T = 25 C
j
°
6
7
0.4
0.6
0.8
1.0
R
, ST
A
T
IC DRAIN-
S
OURCE
O
N
-R
ESI
ST
ANCE (
)
DS
(O
N)
Ω
1.0
1.5
2.0
2.5
3.0
-55
-30
-5
20
45
70
95
120 145
T , JUNCTION TEMPERATURE ( C)
Figure 3 On-Resistance vs. Junction Temperature
J
°
V
= 10V,
I
GS
D
= 200mA
R
, S
TA
T
IC DR
AIN-
SOU
RCE
O
N
-R
ESI
S
TANCE (
)
DS
(O
N)
Ω
0
V , GATE TO SOURCE VOLTAGE (V)
Figure 4 On-Resistance vs. Gate-Source Voltage
GS
1
2
3
4
5
6
0
2
4
6
8
10
12
14
16
18
R
, ST
A
T
IC
DRA
IN-
S
OURCE
ON-
R
E
S
IS
TA
NCE (
)
DS
(O
N)
Ω
0
2
1
4
3
0
0.2
0.4
0.6
0.8
1
V
G
A
T
E-
S
O
U
R
C
E
C
U
R
R
EN
T
(V
)
GS
,
I , DRAIN CURRENT (A)
Figure 5 Typical Transfer Characteristics
D
6
5
8
7
10
9
V
= 10V
DS
0
50
100
150
200
250
0
25
50
75
100 125
150 175
200
P
,
P
O
WE
R
DISS
IP
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE ( C)
Figure 6 Max Power Dissipation vs. Ambient Temperature
A
°