Electrical characteristics n-channel, Electrical characteristics p-channel, Bss8402dw – Diodes BSS8402DW User Manual
Page 3
BSS8402DW
Document number: DS30380 Rev. 21 - 2
3 of 7
February 2014
© Diodes Incorporated
BSS8402DW
Electrical Characteristics N-CHANNEL –
Q
1
, 2N7002 Section
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
60 70
⎯
V
V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current
@ T
C
= +25°C
@ T
C
= +125°C
I
DSS
⎯
⎯
1.0
500
µA
V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage
I
GSS
⎯
⎯
±10 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
1.0
⎯
2.5 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance @ T
J
= +25°C
@ T
J
= +125°C
R
DS(on)
⎯
3.2
4.4
7.5
13.5
Ω
V
GS
= 5.0V, I
D
= 0.05A
V
GS
= 10V, I
D
= 0.5A
On-State Drain Current
I
D(on)
0.5 1.0
⎯
A
V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance
g
FS
80
⎯
⎯
mS
V
DS
=10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
22 50 pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
⎯
11 25 pF
Reverse Transfer Capacitance
C
rss
⎯
2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(on)
⎯
7.0 20 ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150Ω, V
GEN
= 10V, R
GEN
= 25Ω
Turn-Off Delay Time
t
D(off)
⎯
11 20 ns
Electrical Characteristics P-CHANNEL –
Q
2
, BSS84 Section
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-50
⎯
⎯
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
⎯
⎯
⎯
⎯
-1
-2
-100
µA
µA
nA
V
DS
= -50V, V
GS
= 0V, T
J
= 25°C
V
DS
= -50V, V
GS
= 0V, T
J
= 125°C
V
DS
= -25V, V
GS
= 0V, T
J
= 25°C
Gate-Body Leakage
I
GSS
⎯
⎯
±10
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.8
⎯
-2.0 V
V
DS
= V
GS
, I
D
= -1mA
Static Drain-Source On-Resistance
R
DS (on)
⎯
⎯
10
Ω
V
GS
= -5V, I
D
= -0.100A
Forward Transconductance
g
FS
.05
⎯
⎯
S
V
DS
= -25V, I
D
= -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
⎯
45 pF
V
DS
= -25V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
⎯
⎯
25 pF
Reverse Transfer Capacitance
C
rss
⎯
⎯
12 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(on)
⎯
10
⎯
ns
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50Ω, V
GS
= -10V
Turn-Off Delay Time
t
D(off)
⎯
18
⎯
ns
Note:
6. Short duration pulse test used to minimize self-heating effect.