Diodes BSS123W - Manual (Page 3)

BSS123W
Document number: DS30368 Rev. 11 - 2
3 of 5
www.diodes.com
October 2013
© Diodes Incorporated
BSS123W
0
0.2
0.7
0 1 3 4 5
I,
D
R
AI
N
-S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
2
0.6
0.5
0.1
0.3
0.4
0.8
1.2
1.6
0.1 0.2
R
, N
O
R
MA
LI
Z
E
D
DRAIN-S
OURCE ON-
R
ESIS
TANCE
DS
(O
N
)
I , DRAIN-SOURCE CURRENT (A)
Fig. 2 On-Resistance Variation with Gate Voltage
and Drain-Source Current
D
2.0
2.4
0.3 0.4 0.5 0.6
0.7
0.8
0.9
-50 0 75 100 125 150
V
N
O
R
MA
LI
Z
E
D
T
H
R
ES
H
O
LD
V
O
LT
A
G
E
GS
(t
h
),
T , JUNCTION TEMPERATURE (ºC)
Fig. 3 Gate Threshold Variation with Temperature
J
1
1.1
1.2
-25 25 50
V = V
I = 250 A
DS GS
D

0.4
0.8
1.2
-50 0 75 100 125 150
R
N
O
R
MA
L
IZ
E
D
O
N-
R
ES
IS
TAN
C
E
DS
(O
N)
,
T , JUNCTION TEMPERATURE (ºC)
Fig. 4 On-Resistance Variation with Temperature
J
1.6
1.8
2.2
-25 25 50
0.6
1
1.4
2
0
50
0 5 15 20 25
C
,
C
A
P
A
C
IT
AN
C
E (
p
F)
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Typical Capacitance
DS
10
40
30
10
20
0
50
100
100 200
P
,
P
O
WE
R
D
IS
S
IP
A
T
IO
N
(m
W)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 6 Power Derating Curve, Total Package
A
150
200
250
0