Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes BSS123W User Manual
Page 2: Bss123w

BSS123W
Document number: DS30368 Rev. 11 - 2
2 of 5
October 2013
© Diodes Incorporated
BSS123W
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
100 V
Drain-Gate Voltage R
GS
20KΩ
V
DGR
100 V
Gate-Source Voltage
Continuous
V
GSS
20
V
Drain Current (Note 6)
Continuous
Pulsed
I
D
I
DM
170
680
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 6)
P
D
200 mW
Thermal Resistance, Junction to Ambient (Note 6)
R
θJA
625 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
100
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
1.0
10
µA
nA
V
DS
= 100V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V
Gate-Body Leakage, Forward
I
GSSF
50
nA
V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.8
1.4
2.0
V
V
DS
= V
GS
, I
D
= 1mA
Static Drain-Source On-Resistance
R
DS(ON)
6.0
10
Ω
V
GS
= 10V, I
D
= 0.17A
V
GS
= 4.5V, I
D
= 0.17A
Forward Transconductance
g
FS
80
370
mS
V
DS
= 10V, I
D
= 0.17A, f = 1.0KHz
Drain-Source Diode Forward Voltage
V
SD
0.84 1.3 V V
GS
= 0V, I
S
= 0.34A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
29
60
pF
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
10
15
pF
Reverse Transfer Capacitance
C
rss
2
6
pF
SWITCHING CHARACTERISTICS(Note 8)
Turn-On Rise Time
t
r
8
ns
V
DD
= 30V, I
D
= 0.28A,
R
GEN
= 50Ω, V
GS
= 10V
Turn-Off Fall Time
t
f
16
ns
Turn-On Delay Time
t
D(ON)
8
ns
Turn-Off Delay Time
t
D(OFF)
13
ns
Notes:
6. Part mounted on FR-4 board with recommended pad layout, which can be found on our websit
8. Guaranteed by design. Not subject to production testing.