Electrical characteristics, Typical electrical characteristics – Diodes 2DB1132P/Q/R User Manual
Page 4
2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
4 of 6
December 2013
© Diodes Incorporated
2DB1132P/Q/R
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
-40
— — V
I
C
= -50µA
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
-32
— — V
I
C
= -1mA
Emitter-Base Breakdown Voltage
BV
EBO
-5
— — V
I
E
= -50µA
Collector Cut-off Current
I
CBO
— — -0.5 µA
V
CB
=-20V
Emitter Cut-off Current
I
EBO
— — -0.5 µA
V
EB
= -4V
Static Forward Current Transfer
Ratio (Note 10)
2DB1132P
h
FE
82
—
180
—
I
C
= -100mA, V
CE
= -3V
2DB1132Q 120
270
2DB1132R 180
390
Collector-Emitter saturation Voltage (Note 10)
V
CE(sat)
—
-125 -500 mV I
C
=-500mA, I
B
= -50mA
Transition frequency
f
T
—
190 — MHz
I
E
= 50mA, V
CE
= -5V,f=30MHz
Output Capacitance
C
ob
—
12 30 pF
I
E
= 0A, V
CB
= -10V,f=1MHz
Notes:
10. Measured under pulsed conditions. Pulse width
≤
300
µs. Duty cycle ≤ 2%
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
0.001
0.01
0.1
1
10
100
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V
= -3V
CE
200
300
400
500
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
I /I = 10
C B
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V
= -3V
CE