Diodes 2DB1132P/Q/R - Manual (Page 2)

2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
2 of 6
www.diodes.com
December 2013
© Diodes Incorporated
2DB1132P/Q/R
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-40 V
Collector-Emitter Voltage V
CEO
-32 V
Emitter-Base Voltage V
EBO
-5 V
Continuous Collector Current I
C
-1 A
Peak Pulse Current I
CM
-2 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 5)
P
D
1
W (Note 6) 1.5
(Note 7) 2.0
Thermal Resistance, Junction to Ambient Air
(Note 5)
R
θJA
125
°C/W  (Note 6) 83
(Note 7) 60
Thermal Resistance, Junction to Lead (Note 8) R
θJL
22 °C/W 
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
ESD Ratings
(Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on 25mm x 25mm 1oz copper.
7. Same as note (5), except the device is mounted on 50mm x 50mm 1oz copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.