Diodes ZXSC410/ZXSC420/ZXSC440 - Manual (Page 3)

ZXSC410/ZXSC420/ZXSC440
Document number: DS33618 Rev. 5 - 2
3 of 17
www.diodes.com
March 2013
© Diodes Incorporated
ZXSC410/ZXSC420/ZXSC440
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Parameter Rating Unit
V
CC
-0.3 to +10 V
Drive -0.3 to V
CC
+0.3 V
EOR -0.3 to V
CC
+0.3 V
STDN -0.3 to The lower of (+5.0) or (V
CC
+0.3) V
V
FB
, Sense -0.3 to The lower of (+5.0) or (V
CC
+0.3) V
Operating Temperature -40 to +85 °C
Storage Temperature -55 to +120 °C
Power Dissipation @ +25°C 450 mW
Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may
be affected by exposure to absolute maximum rating conditions for extended periods of time.
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when
handling and transporting these devices.
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Min Max Unit
V
CC
V
CC
Range 1.8 8 V
T
A
Ambient Temperature Range -40 +85 °C
V
IH
Shutdown Threshold 1.5 V
CC
V
V
IL
Shutdown Threshold 0 0.55 V
Electrical Characteristics
(V
CC
= 3V, @T
A
= +40°C to +85°C, unless otherwise specified.)
Symbol Parameter Conditions Min Typ Max Unit
I
Q
(Note 4) Quiescent Current V
CC
= 8V 220 µA
I
STDN
Shutdown Current 4.5 µA
E
FF
(Note 5) Efficiency 50mA > I
OUT
> 300mA 85 %
ACC
REF
Reference Tolerance 1.8V < V
CC
< 8V -3.0 +3.0 %
TCO
REF
Reference Temp Co. 0.005 %/°C
T
DRV
Discharge Pulse Width 1.8V < V
CC
< 8V 1.7 µs
F
OSC
Operating Frequency 200 kHz
Input Parameters
V
SENSE
Sense Voltage (Note 5) 22 28 34 mV
I
SENSE
Sense Input Current V
FB
= 0V; V
SENSE
= 0V -1 -7 -15 µA
V
FB
Feedback Voltage T
A
= +25°C 291 300 309 mV
I
FB
(Note 6) Feedback Input Current V
FB
= 0V; V
SENSE
= 0V -1.2 -4.5 µA
dV
LN
Line Voltage Regulation 0.5 %/V
Output Parameters
I
OUT
(Note 7) Output Current V
IN
> 2V, V
OUT
= V
IN
300 mA
I
DRIVE
Transistor Drive Current V
DRIVE
= 0.7V 2 3.4 5 mA
V
DRIVE
Transistor Voltage Drive 1.8V < V
CC
< 8V 0 V
CC
-0.4 V
C
DRIVE
MOSFET Gate Drive cpbty 300 pF
V
OHEOR
EOR Flag Output High I
EOR
= -300nA 2.5 V
CC
V
V
OLEOR
EOR Flag Output Low I
EOR
= 1mA 0 1.15 V
T
EOR
EOR Delay Time T
A
= +25°C 70 195 250 µs
dI
LD
Load Current Regulation 0.01 %/mA
Notes: 4. Excluding gate/base drive current.
5. Effective sense voltage observed when switching at approximately 100kHz. The internal comparator propagation delay of approximately 1µs causes an
increase in the effective sense voltage over a DC measurement of the sense voltage.
6. I
FB
is typically half of these values at 3V.
7. System not device specification, including recommended transistors.