Recommended operating conditions, Thermal characteristics, Safe operating area – Diodes ZXMS6006DT8 User Manual
Page 4: Derating curve, Transient thermal impedance, Pulse power dissipation
ZXMS6006DT8
Document number: DS35143 Rev. 1 - 2
4 of 9
December 2010
© Diodes Incorporated
ZXMS6006DT8
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Recommended Operating Conditions
The ZXMS6006DT8 is optimized for use with µC operating from 3.3V and 5V supplies.
Characteristic Symbol
Min
Max
Unit
Input Voltage Range
V
IN
0 5.5 V
Ambient Temperature Range
T
A
-40 125 °C
High Level Input Voltage for MOSFET to be on
V
IH
3 5.5 V
Low Level Input Voltage for MOSFET to be off
V
IL
0 0.7 V
Peripheral Supply Voltage (voltage to which load is referred)
V
P
0 16 V
Thermal Characteristics
1
10
10m
100m
1
10
25X25X1.6mm FR4
Single 1oz Cu
One active die
Limited by Over-Current Protection
Single Pulse
Tamb=25°C
Limited
by R
DS(on)
1ms
10ms
100ms
1s
DC
Safe Operating Area
I
D
Drai
n Cu
rrent
(A
)
V
DS
Drain-Source Voltage (V)
Limit of s/c protection
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1 active die
Derating Curve
Temperature (°C)
M
a
x P
o
wer
Di
s
s
ip
a
ti
o
n
(W
)
2 active die
100µ
1m
10m 100m
1
10
100
1k
0
20
40
60
80
100
120
25X25X1.6mm FR4
Single 1oz Cu
One active die
T
amb
=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
herm
a
l Resi
s
tance (°
C/
W
)
Pulse Width (s)
100µ
1m
10m 100m
1
10
100
1k
1
10
100
25X25X1.6mm FR4
Single 1oz Cu
One active die
Single Pulse
T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
Max
imum P
o
w
e
r (
W
)