Thermal characteristics, Safe operating area, Derating curve – Diodes ZXMS6005DT8 User Manual
Page 4: Transient thermal impedance, Pulse power dissipation
ZXMS6005DT8
Document number: DS32248 Rev. 2 - 2
4 of 9
March 2013
© Diodes Incorporated
ZXMS6005DT8
ADVAN
CE I
N
F
O
RM
ATI
O
N
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
A Product Line of
Diodes Incorporated
Thermal Characteristics
1
10
10m
100m
1
10
25X25X1.6mm FR4
Single 1oz Cu
One active die
Limited by Over-Current Protection
Single Pulse
Tamb=25°C
Limited
by R
DS(on)
1ms
10ms
100ms
1s
DC
Safe Operating Area
I
D
Drai
n Cu
rrent
(A
)
V
DS
Drain-Source Voltage (V)
Limit of s/c protection
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1 active die
Derating Curve
Temperature (°C)
M
a
x P
o
wer
Di
ss
ip
at
io
n
(W
)
2 active die
100µ
1m
10m 100m
1
10
100
1k
0
20
40
60
80
100
120
25X25X1.6mm FR4
Single 1oz Cu
One active die
T
amb
=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
herm
a
l Resi
st
ance (°
C/
W
)
Pulse Width (s)
100µ
1m
10m 100m
1
10
100
1k
1
10
100
25X25X1.6mm FR4
Single 1oz Cu
One active die
Single Pulse
T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
Max
imum P
ow
e
r (
W
)