Typical characteristics q1 n-channel, Test circuits – Diodes ZXMC10A816N8 User Manual
Page 6
ZXMC10A816N8
Document number: DS33497 Rev. 2 - 2
6 of 11
March 2013
© Diodes Incorporated
ZXMC10A816N8
Typical Characteristics Q1 N-Channel
(cont.)
Test Circuits
Current
regulator
Charge
Gate charge test circuit
Switching time test circuit
Basic gate charge waveform
Switching time waveforms
D.U.T
50k
12V
Same as
D.U.T
V
GS
V
GS
V
DS
V
G
Q
GS
Q
GD
Q
G
V
GS
90%
10%
t
(on)
t
(on)
t
d(on)
t
r
t
r
t
d(off)
V
DS
DD
V
R
D
R
G
V
DS
I
D
I
G
0.1
1
10
100
0
100
200
300
400
500
600
700
C
RSS
C
OSS
C
ISS
V
GS
= 0V
f = 1MHz
C Ca
p
ac
it
an
ce
(
p
F)
V
DS
- Drain - Source Voltage (V)
0
2
4
6
8
10
0
2
4
6
8
10
I
D
= 1.6A
V
DS
= 50V
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Q - Charge (nC)
V
GS
G
at
e-
S
our
ce
V
o
lt
ag
e (
V
)
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