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Typical characteristics q1 n-channel, Test circuits – Diodes ZXMC10A816N8 User Manual

Page 6

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ZXMC10A816N8

Document number: DS33497 Rev. 2 - 2

6 of 11

www.diodes.com

March 2013

© Diodes Incorporated

ZXMC10A816N8









Typical Characteristics Q1 N-Channel

(cont.)


Test Circuits

Current

regulator

Charge

Gate charge test circuit

Switching time test circuit

Basic gate charge waveform

Switching time waveforms

D.U.T

50k

12V

Same as

D.U.T

V

GS

V

GS

V

DS

V

G

Q

GS

Q

GD

Q

G

V

GS

90%

10%

t

(on)

t

(on)

t

d(on)

t

r

t

r

t

d(off)

V

DS

DD

V

R

D

R

G

V

DS

I

D

I

G









0.1

1

10

100

0

100

200

300

400

500

600

700

C

RSS

C

OSS

C

ISS

V

GS

= 0V

f = 1MHz

C Ca

p

ac

it

an

ce

(

p

F)

V

DS

- Drain - Source Voltage (V)

0

2

4

6

8

10

0

2

4

6

8

10

I

D

= 1.6A

V

DS

= 50V

Gate-Source Voltage v Gate Charge

Capacitance v Drain-Source Voltage

Q - Charge (nC)

V

GS

G

at

e-

S

our

ce

V

o

lt

ag

e (

V

)