Electrical characteristics q1 n-channel – Diodes ZXMC10A816N8 User Manual
Page 4
ZXMC10A816N8
Document number: DS33497 Rev. 2 - 2
4 of 11
March 2013
© Diodes Incorporated
ZXMC10A816N8
Electrical Characteristics Q1 N-Channel
(@T
A
= +25°C, unless otherwise specified.)
Parameter Symbol
Min
Typ
Max
Unit
Conditions
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
100 — — V
I
D
= 250µA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
— — 0.5 µA
V
DS
= 100V, V
GS
= 0V
Gate-Body Leakage
I
GSS
— — 100 nA
V
GS
=
20V, V
DS
= 0V
Gate-Source Threshold Voltage
V
GS(th)
1.7 — 2.4 V
I
D
= 250µA, V
DS
= V
GS
Static Drain-Source On-State Resistance
(a)
R
DS(ON)
—
0.170
0.210
0.230
0.300
Ω
V
GS
= 10V, I
D
= 1.0A
V
GS
= 4.5V, I
D
= 0.5A
Forward Transconductance
(a) (c)
g
fs
— 4.8
—
S
V
DS
= 15V, I
D
= 1.6A
Dynamic Capacitance
(c)
Input Capacitance
C
iss
— 497 — pF
V
DS
= 50V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
oss
— 29 — pF
Reverse Transfer Capacitance
C
rss
— 18 — pF
Switching
(b) (c)
Turn-On-Delay Time
t
d(ON)
— 2.9 — ns
V
DD
= 50V, V
GS
= 10V
I
D
= 1.0A
R
G
6.0,
Rise Time
t
r
— 2.1 — ns
Turn-Off Delay Time
t
d(OFF)
— 12.1 — ns
Fall Time
t
f
— 5.0 — ns
Gate Charge
(c)
Total Gate Charge
Q
g
— 9.2 — nC
V
DS
= 50V, V
GS
= 10V
I
D
= 1.6A
Gate-Source Charge
Q
gs
— 1.7 — nC
Gate-Drain Charge
Q
gd
— 2.5 — nC
Source–Drain Diode
Diode Forward Voltage
(a)
V
SD
— 0.85 0.95 V
I
S
= 1.7A, V
GS
= 0V
Reverse Recovery Time
(c)
t
rr
— 32 — ns
I
S
= 1.7A, di/dt = 100A/
s
Reverse Recovery Charge
(c)
Q
rr
— 40 — nC
Gate Resistance
Gate Resistance
R
G
0 — 3 Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Notes:
(a) Measured under pulsed conditions. Pulse width
300
s; duty cycle
2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing.