Maximum ratings, Thermal characteristics – Diodes ZXMC10A816N8 User Manual
Page 2
ZXMC10A816N8
Document number: DS33497 Rev. 2 - 2
2 of 11
March 2013
© Diodes Incorporated
ZXMC10A816N8
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Parameter Symbol
N-channel
Q1
P-channel
Q2
Unit
Drain-Source Voltage
V
DSS
100 -100 V
Gate-Source Voltage
V
GS
20
20 V
Continuous Drain Current @ V
GS
= 10V; T
A
= +25°C
(b)(d)
@ V
GS
= 10V; T
A
= +70°C
(b)(d)
@ V
GS
= 10V; T
A
= +25°C
(a)(d)
@ V
GS
= 10V; T
A
= +25°C
(a)(e)
@ V
GS
= 10V; T
L
= +25°C
(f)(d)
I
D
2.1
1.7
1.7
2.0
2.3
-2.2
-1.8
-1.7
-2.0
-2.4
A
Pulsed Drain Current @ V
GS
= 10V; T
A
= +25°C
(c)(d)
I
DM
9.4 -10.5 A
Continuous Source Current (Body Diode) at T
A
= +25°C
(b)(d)
I
S
3.0 -3.1 A
Pulsed Source Current (Body Diode) at T
A
= +25°C
(c)(d)
I
SM
9.4 -10.5 A
Avalanche Current (g) L = 0.1 mH
I
AS
1.2 12 A
Power Dissipation at T
A
= +25°C
(a)(d)
Linear Derating Factor
P
D
1.3
10.0
W
mW/
C
Power Dissipation at T
A
= +25°C
(a)(e)
Linear Derating Factor
P
D
1.8
14.2
W
mW/
C
Power Dissipation at T
A
= +25°C
(b)(d)
Linear Derating Factor
P
D
2.1
16.7
W
mW/
C
Power Dissipation at T
L
= +25°C
(f)(d)
Linear Derating Factor
P
D
2.4
18.9
2.6
20.4
W
mW/
C
Operating and Storage Temperature Range
T
j
, T
stg
-55 to +150
C
Thermal Characteristics
Parameter Symbol
Value
Unit
Junction to Ambient
(a)(d)
R
JA
100
C/W
Junction to Ambient
(a)(e)
R
JA
70
C/W
Junction to Ambient
(b)(d)
R
JA
60
C/W
Junction to Lead
(f)(d)
R
JL
53 49
C/W
Notes:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
(b) Same as note (a), except the device is measured at t
10 sec.
(c) Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
(f) Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state condition.
(g) IAS rating are based on low frequency and duty cycles to keep T
J
= +25°C.