beautypg.com

Maximum ratings, Thermal characteristics – Diodes ZXMC10A816N8 User Manual

Page 2

background image

ZXMC10A816N8

Document number: DS33497 Rev. 2 - 2

2 of 11

www.diodes.com

March 2013

© Diodes Incorporated

ZXMC10A816N8





Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Parameter Symbol

N-channel

Q1

P-channel

Q2

Unit

Drain-Source Voltage

V

DSS

100 -100 V

Gate-Source Voltage

V

GS

20

20 V

Continuous Drain Current @ V

GS

= 10V; T

A

= +25°C

(b)(d)

@ V

GS

= 10V; T

A

= +70°C

(b)(d)

@ V

GS

= 10V; T

A

= +25°C

(a)(d)

@ V

GS

= 10V; T

A

= +25°C

(a)(e)

@ V

GS

= 10V; T

L

= +25°C

(f)(d)

I

D

2.1
1.7
1.7
2.0
2.3

-2.2
-1.8
-1.7
-2.0
-2.4

A

Pulsed Drain Current @ V

GS

= 10V; T

A

= +25°C

(c)(d)

I

DM

9.4 -10.5 A

Continuous Source Current (Body Diode) at T

A

= +25°C

(b)(d)

I

S

3.0 -3.1 A

Pulsed Source Current (Body Diode) at T

A

= +25°C

(c)(d)

I

SM

9.4 -10.5 A

Avalanche Current (g) L = 0.1 mH

I

AS

1.2 12 A

Power Dissipation at T

A

= +25°C

(a)(d)

Linear Derating Factor

P

D

1.3

10.0

W

mW/

C

Power Dissipation at T

A

= +25°C

(a)(e)

Linear Derating Factor

P

D

1.8

14.2

W

mW/

C

Power Dissipation at T

A

= +25°C

(b)(d)

Linear Derating Factor

P

D

2.1

16.7

W

mW/

C

Power Dissipation at T

L

= +25°C

(f)(d)

Linear Derating Factor

P

D

2.4

18.9

2.6

20.4

W

mW/

C

Operating and Storage Temperature Range

T

j

, T

stg

-55 to +150

C


Thermal Characteristics

Parameter Symbol

Value

Unit

Junction to Ambient

(a)(d)

R

JA

100

C/W

Junction to Ambient

(a)(e)

R

JA

70

C/W

Junction to Ambient

(b)(d)

R

JA

60

C/W

Junction to Lead

(f)(d)

R

JL

53 49

C/W

Notes:

(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

(b) Same as note (a), except the device is measured at t

 10 sec.

(c) Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.

(d) For a dual device with one active die.

(e) For a device with two active die running at equal power.

(f) Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state condition.

(g) IAS rating are based on low frequency and duty cycles to keep T

J

= +25°C.