Diodes ZXMC3A18DN8 - Manual (Page 7)

ZXMC3A18DN8
Issue 2 - September 2007 7 www.zetex.com
© Zetex Semiconductors plc 2007
P-channel
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown
voltage V
(BR)DSS
-30 V I
D
= -250 ␮A, V
GS
=0V
Zero gate voltage drain current I
DSS
-1.0
␮A V
DS
= -30V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
-1.0 V I
D
= -250 ␮A, V
DS
=V
GS
Static drain-source on-state
resistance (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
R
DS(on)
0.035 W V
GS
= -10V, I
D
= -4.8A
0.050 V
GS
= -4.5V, I
D
= -4.0A
Forward transconductance (*)(‡) g
fs
8.6 S V
DS
= -15V, I
D
= -4.8A
Dynamic (‡)
Input capacitance C
iss
1603 pF V
DS
= -15V, V
GS
=0V
f=1MHz
Output capacitance C
oss
434 pF
Reverse transfer capacitance C
rss
388 pF
Switching (†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time t
d(on)
4.8 ns V
DD
= -15V, I
D
= -1A
R
G
@ 6.0 ⍀, V
GS
= 10V
Rise time t
r
9.5 ns
Turn-off delay time t
d(off)
60 ns
Fall time t
f
38 ns
Gate charge Q
g
25 nC V
DS
= -15V, V
GS
= -5V
I
D
= -4.8A
Total gate charge Q
g
45 nC V
DS
= -15V, V
GS
= -10V
I
D
= -4.8A
Gate-source charge Q
gs
5.1 nC
Gate drain charge Q
gd
11.5 nC
Source-drain diode
Diode forward voltage (*) V
SD
0.82 -0.95 V T
j
=25°C, I
S
= -3.7
V
GS
=0V
Reverse recovery time (‡) t
rr
32.5 ns T
j
=25°C, I
S
= -2.2,
di/dt=100A/
␮s
Reverse recovery charge (‡) Q
rr
18.4 nC