Zxmc3a18dn8, N-channel electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXMC3A18DN8 User Manual
Page 4

ZXMC3A18DN8
© Zetex Semiconductors plc 2007
N-channel
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit Conditions
Static
Drain-source breakdown
voltage
V
(BR)DSS
30
V
I
D
= 250
A, V
GS
=0V
Zero gate voltage drain current I
DSS
0.5
A V
DS
=30V, V
GS
=0V
Gate-body leakage
I
GSS
100
nA
V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage
V
GS(th)
1.0
V
I
D
= 250
A, V
DS
=V
GS
Static drain-source on-state
resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ300s; duty cycle Յ2%.
R
DS(on)
0.025
⍀
V
GS
= 10V, I
D
= 5.8A
0.030
V
GS
= 4.5V, I
D
= 5.3A
Forward transconductance
g
fs
17.5
S
V
DS
= 15V, I
D
= 5.8A
Input capacitance
C
iss
1800
pF
V
DS
= 25V, V
GS
=0V
f=1MHz
Output capacitance
C
oss
289
pF
Reverse transfer capacitance
C
rss
178
pF
Switching
(†)
(‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time
t
d(on)
5.5
ns
V
DD
= 15V, I
D
= 6A
R
G
≅ 6.0⍀, V
GS
= 10V
Rise time
t
r
8.7
ns
Turn-off delay time
t
d(off)
33
ns
Fall time
t
f
8.5
ns
Gate charge
Q
g
19.4
nC
V
DS
= 15V, V
GS
= 5V
I
D
= 3.5A
Total gate charge
Q
g
36
nC
V
DS
= 15V, V
GS
= 10V
I
D
= 3.5A
Gate-source charge
Q
gs
5.5
nC
Gate drain charge
Q
gd
7.0
nC
Source-drain diode
Diode forward voltage
V
SD
0.95
V
T
j
=25°C, I
S
= 6A, V
GS
=0V
Reverse recovery time
t
rr
20.5
ns
T
j
=25°C, I
S
= 6A,
di/dt=100A/
s
Reverse recovery charge
Q
rr
41.5
nC