Absolute maximum ratings, Thermal resistance, Zxmc3a18dn8 – Diodes ZXMC3A18DN8 User Manual
Page 2

ZXMC3A18DN8
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t
Յ10 sec.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300
s, d<= 0.02. Refer to
transient thermal impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
Parameter
Symbol
N-channel P-channel
Unit
Drain-source voltage
V
DSS
30
-30
V
Gate-source voltage
V
GS
±20
±20
V
Continuous drain current (V
GS
= 10V; T
amb
=25°C)
I
D
7.6
-6.3
A
(V
GS
= 10V; T
amb
=70°C)
6.1
-5.0
(V
GS
= 10V; T
amb
=25°C)
5.8
-4.8
Pulsed drain current
I
DM
37
-30
A
Continuous source current (body diode)
I
S
3.6
3.2
A
Pulsed source current (body diode)
I
SM
37
30
A
Power dissipation at T
amb
=25°C
P
D
1.25
W
Linear derating factor
10
mW/°C
Power dissipation at T
amb
=25°C
P
D
1.8
W
Linear derating factor
14
mW/°C
Power dissipation at T
amb
=25°C
P
D
2.1
W
Linear derating factor
17
mW/°C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
°C
Thermal resistance
Parameter
Symbol
Value
Unit
Junction to ambient
R
⍜JA
100
°C/W
Junction to ambient
R
⍜JA
70
°C/W
Junction to ambient
R
⍜JA
60
°C/W