Diodes ZXMC3A18DN8 - Manual

Issue 2 - September 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
ZXMC3A18DN8
Complementary 30V enhancement mode MOSFET
Summary
N-Channel = V
(BR)DSS
= 30V : R
DS(on)
= 0.025
⍀; I
D
= 7.6A
P-Channel = V
(BR)DSS
= -30V : R
DS(on)
= 0.035 ⍀; I
D
= -6.3A
Description
This new generation of trench MOSFETs from Zetex
utilizes a unique structure that combines the benefits of
low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power
management applications.
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
Applications
• Motor Drive
• LCD backlighting
Ordering information
Device marking
ZXMC
3A18
Device Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMC3A18DN8TC 13 12 2500
D2
S2
G2
D1
Q1 N-Channel Q2 P-Channel
S1
G1
D1 S1
G1
S2
G2
SO8
D1
D2
D2