Electrical characteristics – Diodes ZXMN10A11G User Manual
Page 4
ZXMN10A11G
Document Number DS32056 Rev. 6 - 2
4 of 8
January 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN10A11G
ADVAN
CE I
N
F
O
RM
ATI
O
N
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
100
⎯
⎯
V
I
D
= 250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
1
μA
V
DS
= 100V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
2.0
⎯
4.0 V
I
D
= 250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 5)
R
DS (ON)
⎯
⎯
0.35
Ω
V
GS
= 10V, I
D
= 2.6A
0.45
V
GS
= 6V, I
D
= 1.3A
Forward Transconductance (Notes 5 & 6)
g
fs
⎯
4
⎯
S
V
DS
= 15V, I
D
= 2.6A
Diode Forward Voltage (Note 5)
V
SD
⎯
0.85 0.95 V
I
S
= 1.85A, V
GS
= 0V
Reverse recovery time (Note 6)
t
rr
26
⎯
ns
I
F
= 1.0A, di/dt = 100A/
μs
Reverse recovery charge (Note 6)
Q
rr
⎯
30
⎯
nC
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C
iss
⎯
274
⎯
pF
V
DS
= 50V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
oss
⎯
21
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
11
⎯
pF
Total Gate Charge (Note 7)
Q
g
⎯
3.5
⎯
nC
V
GS
= 6.0V
V
DS
= 50V
I
D
= 2.5A
Total Gate Charge (Note 7)
Q
g
⎯
5.4
⎯
nC
V
GS
= 10V
Gate-Source Charge (Note 7)
Q
gs
⎯
1.4
⎯
nC
Gate-Drain Charge (Note 7)
Q
gd
⎯
1.5
⎯
nC
Turn-On Delay Time (Note 7)
t
D(on)
⎯
2.7
⎯
ns
V
DD
= 50V, V
GS
= 10V
I
D
= 1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 7)
t
r
⎯
1.7
⎯
ns
Turn-Off Delay Time (Note 7)
t
D(off)
⎯
7.4
⎯
ns
Turn-Off Fall Time (Note 7)
t
f
⎯
3.5
⎯
ns
Notes:
5. Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%
6. For design aid only, not subject to production testing.
7. Switching characteristics are independent of operating junction temperatures.