Maximum ratings, Thermal characteristics – Diodes ZXMN10A11G User Manual
Page 2
ZXMN10A11G
Document Number DS32056 Rev. 6 - 2
2 of 8
January 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN10A11G
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Drain-Source voltage
V
DSS
100 V
Gate-Source voltage
V
GS
±20
V
Continuous Drain current
V
GS
= 10V
(Note 2)
I
D
2.4
A
T
A
= 70°C (Note 2)
1.9
(Note 1)
1.7
Pulsed Drain current
V
GS
= 10V
(Note 3)
I
DM
7.9 A
Continuous Source current (Body diode)
(Note 2)
I
S
4.6 A
Pulsed Source current (Body diode)
(Note3 )
I
SM
7.9 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Power dissipation
Linear derating factor
(Note 1)
P
D
2.0
16
W
mW/
°C
(Note 2)
3.9
31
Thermal Resistance, Junction to Ambient
(Note 1)
R
θJA
62.5
°C/W
(Note 2)
32.0
Thermal Resistance, Junction to Lead
(Note 4)
R
θJL
9.8
°C/W
Operating and storage temperature range
T
J
, T
STG
-55 to 150
°C
Notes:
1. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
2. Same as note (1), except the device is measured at t
≤ 10 sec.
3. Same as note (1), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
4. Thermal resistance from junction to solder-point (at the end of the drain lead)