Diodes ZXMN10A11G User Manual
100v n-channel enhancement mode mosfet, Product summary, Description and applications
ZXMN10A11G
Document Number DS32056 Rev. 6 - 2
1 of 8
January 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN10A11G
ADVAN
CE I
N
F
O
RM
ATI
O
N
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
I
D
T
A
= 25
°C
100V
350m
Ω @ V
GS
= 10V
2.4A
450m
Ω @ V
GS
= 6.0V
2.1A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
• Motor
control
• DC-DC
Converters
•
Power management functions
•
Uninterrupted power supply
Features and Benefits
•
Fast switching speed
•
Low gate drive
•
Low input capacitance
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
SOT223
•
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.112 grams (approximate)
Ordering Information
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXMN10A11GTA See
below
7
12
1,000
Marking Information
Top View
SOT223
ZXMN = Product Type Marking Code, Line 1
10A11 = Product Type Marking Code, Line 2
ZXMN
10A11
Equivalent Circuit
D
S
G
Pin Out - Top View