Diodes ZXMN6A25N8 - Manual (Page 6)

ZXMN6A25N8
Issue 1 - April 2008 6
© Zetex Semiconductors plc 2008
www.zetex.com
Typical characteristics
0.1 1 10
0
200
400
600
800
1000
1200
1400
1600
C
RSS
C
OSS
C
ISS
V
GS
= 0V
f = 1MHz
C Ca
pac
itan
ce
(
pF)
V
DS
- Drain - Source Voltage (V)
0 5 10 15 20 25
0
2
4
6
8
10
I
D
= 4.5A
V
DS
= 30V
Gate-Source Voltage v Gate Charge Capacitance v Drain-Source Voltage
Q - Charge (nC) V
GS
G
a
te
-S
ou
rc
e Vo
lta
ge
(V)
Test circuits