Diodes ZXMN6A25N8 - Manual (Page 4)

ZXMN6A25N8
Issue 1 - April 2008 4
© Zetex Semiconductors plc 2008
www.zetex.com
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-Source breakdown
voltage V
(BR)DSS
60 V I
D
=250 μA, V
GS
=0V
Zero gate voltage drain
current I
DSS 1.0 µA V
DS
=60V, V
GS
=0V
Gate-Body leakage I
GSS
100 nA V
GS
= ± 20V, V
DS
=0V
Gate-Source threshold
voltage V
GS(th) 1 3 V I
D
=250 μA, V
DS
=V
GS
Static Drain-Source
on-state resistance
( * )
R
DS(on)
0.050
0.070 Ω V
GS
= 10V, I
D
= 3.6A
V
GS
= 4.5V, I
D
= 3.0A
Forward
Transconductance
( * ) (†)
g
fs
10.2 S V
DS
= 15V, I
D
= 4.5A
Dynamic
(†)
Input capacitance C
iss
1063 pF
Output capacitance C
oss
104 pF
Reverse transfer
capacitance C
rss
64 pF
V
DS
= 30V, V
GS
=0V
f=1MHz
Switching
(‡) (†)
Turn-on-delay time t
d(on)
3.8 ns
Rise time t
r
4.0 ns
Turn-off delay time t
d(off)
26.2 ns
Fall time t
f
10.6 ns
V
DD
= 30V, V
GS
= 10V
I
D
= 1A
R
G
≅ 6.0Ω,
Gate charge Q
g
11.0 nC V
DS
= 30V, V
GS
= 5V
I
D
= 4.5A
Total gate charge Q
g
20.4 nC
Gate-Source charge Q
gs
4.1 nC
Gate-Drain charge Q
gd
5.1 nC
V
DS
= 30V, V
GS
= 10V
I
D
= 4.5A
Source–Drain diode
Diode forward voltage
( * )
V
SD
0.85 0.95 V I
S
= 5.5A,V
GS
=0V
Reverse recovery time
(‡)
t
rr
22.0 ns
Reverse recovery charge
(‡)
Q
rr
21.4 nC
I
S
= 2.2A,di/dt=100A/ μs
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing