Diodes ZXMN6A25N8 - Manual (Page 2)

ZXMN6A25N8
Issue 1 - April 2008 2
© Zetex Semiconductors plc 2008
www.zetex.com
Absolute maximum ratings
Parameter Symbol Limit Unit
Drain-Source voltage V
DSS
60 V
Gate-Source voltage V
GS
± 20 V
Continuous Drain current @ V
GS
= 10V; T
A
=25 °C
(b)
@ V
GS
= 10V; T
A
=70 °C
(b)
@ V
GS
= 10V; T
A
=25 °C
(a)
@ V
GS
= 10V; T
L
=25 °C
(a)(d)
I
D
5.7
4.5
4.3
7.0
A
Pulsed Drain current
(c)
I
DM
25.7 A
Continuous Source current (Body diode)
(b)
I
S
4.1 A
Pulsed Source current (Body diode)
(c)
I
SM
25.7 A
Power dissipation at T
A
=25 °C
(a)
Linear derating factor
P
D
1.56
12.5 W
mW/ °C
Power dissipation at T
A
=25 °C
(b)
Linear derating factor
P
D
2.8
22.2
W
mW/ °C
Power dissipation at T
L
=25 °C
(d)
Linear derating factor
P
D
4.14
33.1 W
mW/ °C
Operating and storage temperature range T
j
, T
stg -55 to 150 °C
Thermal resistance
Parameter Symbol Value Unit
Junction to ambient
(a)
R θJA
80 °C/W
Junction to ambient
(b)
R
θJA
45 °C/W
Junction to lead
(d)
R θJL
30.2 °C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions.
(b) Mounted on FR4 PCB measured at t ≤ 10 sec.
(c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction
temperature.
(d) Thermal resistance from junction to solder-point (at the end of the drain lead).